View MB81V4100C-60_544848.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FUJITSU SEMICONDUCTOR DATA SHEET
DS05-10173-4E
MEMORY
CMOS 4 M x 1 BIT FAST PAGE MODE DYNAMIC RAM MB81V4100C-60/-70
CMOS 4,194,304 x 1 BIT Fast Page Mode Dynamic RAM s DESCRIPTION
The Fujitsu MB81V4100C is a fully decoded CMOS Dynamic RAM (DRAM) that contains a total of 4,194,304 memory cells in a x1 configuration. The MB81V4100C features a "fast page" mode of operation whereby highspeed random access of up to 4,096-bits of data within the same row can be selected. The MB81V4100C DRAM is ideally suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory applications where very low power dissipation and high bandwidth are basic requirements of the design. Since the standby current of the MB81V4100C is very small, the device can be used as a non-volatile memory in equipment that uses batteries for primary and/or auxiliary power. The MB81V4100C is fabricated using silicon gate CMOS and Fujitsu's advanced four-layer polysilicon process. This process, coupled with advanced stacked capacitor memory cells, reduces the possibility of soft errors and extends the time interval between memory refreshes. Clock timing requirements for the MB81V4100C are not critical and all inputs are LVTTL compatible.
s PRODUCT LINE & FEATURES
Parameter RAS Access Time CAS Access Time Address Access Time Random Cycle Time Fast Page Mode Cycle Time Low power Dissipation * * * * * Operating current Standby current MB81V4100C-60 MB81V4100C-70 60 ns max. 70 ns max. 15 ns min. 20 ns min. 30 ns max. 35 ns max. 110 ns max. 125 ns max. 40 ns min. 45 ns min. 220 mW max. 195 mW max. 7.2 mW max. (TTL level)/3.6 mW max. (CMOS level) * * * * Common I/O capability by using early write RAS-only, CAS-before-RAS, or Hidden Refresh Fast Page Mode, Read-Modify-Write capability On chip substrate bias generator for high performance
4,194,304 words x 1 bit organization Silicon gate, CMOS, 3D-Stacked Capacitor Cell All input and output are LVTTL compatible 1024 refresh cycles every 16.4 ms Self refresh function
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
1
MB81V4100C-60/MB81V4100C-70
s ABSOLUTE MAXIMUM RATINGS (See WARNING)
Parameter Voltage at any pin relative to VSS Voltage of VCC supply relative to VSS Power Dissipation Short Circuit Output Current Storage Temperature Symbol VIN, VOUT VCC PD IOUT TSTG Value -0.5 to +4.6 -0.5 to +4.6 1.0 -50 to +50 -55 to +125 Unit V V W mA C
WARNING: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
s PACKAGE
Marking side
Marking side
Plastic TSOP Package (FPT-26P-M01) (Normal Bend)
Plastic TSOP Package (FPT-26P-M02) (Reverse Bend)
Package and Ordering Information - 26-pin plastic (300 mil) TSOP-ll with normal bend leads, order as MB81V4100C-xxPFTN - 26-pin plastic (300 mil) TSOP-II with reverse bend leads, order as MB81V4100C-xxPFTR
2
MB81V4100C-60/MB81V4100C-70
Fig. 1 - MB81V4100C DYNAMIC RAM - BLOCK DIAGRAM
RAS CAS
Clock Gen #1 Write Clock Gen Mode Control
WE
Clock Gen #2
A0 A1 A2 A3 A4 A5 A6 A7 A8
Address Buffer & PreDecoder Row Decoder Column Decoder Sense Ampl & I/O Gate
Data In Buffer
DIN
*** * * *
4,194,304 Bit Storage Cell Data Out Buffer
DOUT
A9
A10
Refresh Address Counter
Substrate Bias Gen
VCC VSS
s CAPACITANCE
(TA = 25C, f = 1 MHz)
Parameter Input Capacitance, A0 toA10, DIN Input Capacitance, RAS, CAS, WE Output Capacitance, DOUT
Symbol CIN1 CIN2 COUT
Typ -- -- --
Max 5 7 7
Unit pF pF pF 3
MB81V4100C-60/MB81V4100C-70
s PIN ASSIGNMENTS AND DESCRIPTIONS
26-Pin TSOP:
(TOP VIEW) DIN WE RAS N.C. A10 VSS DOUT CAS N.C. A9 26 25 24 23 22 1 2 3 4 5 DIN WE RAS N.C. A10
1
2 3 4 5
26 25 24 23 22
VSS DOUT CAS N.C. A9
A0 A1 A2 A3 VCC
9 10 11 12 13
18 17 16 15 14
A8 A7 A6 A5 A4
A8 A7 A6 A5 A4
18 17 16 15 14
9 10 11 12 13
A0 A1 A2 A3 VCC
Designator DIN DOUT WE RAS N.C. A0 to A10 VCC CAS VSS
Function Data Input. Data Output. Write Enable. Row address strobe. No connection. Address inputs. +3.3 volt power supply. Column address strobe. Circuit ground.
4
MB81V4100C-60/MB81V4100C-70
s RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage, all inputs Input Low Voltage, all inputs* Notes 1 1 1 Symbol VCC VSS VIH VIL Min. 3.0 0 2.0 -0.3 Typ. 3.3 0 -- -- Max. 3.6 0 VCC + 0.3 0.8 Unit V V V 0C to +70C Ambient Operating Temp
* : Undershoots of up to -2.0 volts with a pulse width not exceeding 20 ns are acceptable.
s FUNCTIONAL OPERATION
ADDRESS INPUTS
Twenty-two input bits are required to decode any one of 4,194,304 cell addresses in the memory matrix. Since only eleven address bits (A0-A10) are available, the column and row inputs are separately strobed by RAS and CAS as shown in Figure 5. First, eleven row address bits are applied on pins A0-through-A10 and latched with the row address strobe (RAS) then, eleven column address bits are applied and latched with the column address strobe (CAS). Both row and column addresses must be stable on or before the falling edge of RAS and CAS, respectively. The flow-through type latch is used for the address latches ; thus, address information appearing after tRAH (min.)+ tT is automatically treated as the column address.
WRITE ENABLE
The read or write mode is determined by the logic state of WE. When WE is active Low, a write cycle is initiated; when WE is High, a read cycle is selected. During the read mode, input data is ignored.
DATA INPUT
Input data is written into memory in either of two basic ways-an early write cycle and a read-modify-write cycle. The falling edge of WE or CAS, whichever is later, serves as the input data-latch strobe. In an early write cycle, the input data is strobed by CAS and the setup/hold times are referenced to the falling edge of CAS because WE goes Low before CAS. In a delayed write or a read-modify-write cycle, WE goes Low after CAS; thus, input data is strobed by WE and all setup/hold times are referenced to the falling edge of WE.
DATA OUTPUT
The three-state buffers are LVTTL compatible with a fanout of one TTL loads. Polarity of the output data is identical to that of the input; the output buffers remain in the high-impedance state until the column address strobe goes Low. When a read or read-modify-write cycle is executed, valid outputs are obtained under the following conditions: tRAC: tCAC : tAA : from the falling edge of RAS when tRCD (max.) is satisfied. from the falling edge of CAS when tRCD is greater than tRCD (max.). from column address input when tRAD is greater than tRAD (max.).
The data remains valid until either CAS returns to a High logic level. When an early write is executed, the output buffers remain in a high-impedance state during the entire cycle.
FAST PAGE MODE OF OPERATION
The fast page mode of operation provides faster memory access and lower power dissipation. The fast page mode is implemented by keeping the same row address and strobing in successive column addresses. To satisfy these conditions, RAS is held Low for all contiguous memory cycles in which row addresses are common. For each fast page of memory, any of 4,096-bits can be accessed and, when multiple MB81V4100Cs are used, CAS is decoded to select the desired memory fast page. Fast page mode operations need not be addressed sequentially and combinations of read, write, and/or read-modify-write cycles are permitted. 5
MB81V4100C-60/MB81V4100C-70
s DC CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.) Notes 3
Parameter Output high voltage Output low voltage Notes 1 1 Symbol VOH VOL Conditions IOH = -2 mA IOL = 2 mA 0 V VIN 3.6 V; 3.0 V VCC 3.6 V; VSS = 0 V; All other pins not under test = 0 V 0 V VOUT 3.6 V; Data out disabled RAS & CAS cycling; tRC = min. RAS = CAS = VIH ICC2 CMOS level MB81V4100C-60 ICC3 2 MB81V4100C-70 MB81V4100C-60 2 ICC4 MB81V4100C-70 MB81V4100C-60 ICC5 2 MB81V4100C-70 MB81V4100C-60 MB81V4100C-70 ICC9 RAS = CAS VCC -0.2 V CAS = VIH, RAS cycling; tRC = min. -- -- 1.0 61 -- -- 54 41 -- -- 37 49 -- -- 44 1000 -- -- 1000 A mA mA mA Values Min. 2.4 -- Typ. -- -- Max. -- V 0.4 Unit
Input leakage current (any input)
II(L)
-10
--
10 A
Output leakage current Operating current (Average power supply current) Standby current (Power supply current) Refresh current#1 (Average power supply current) Fast page mode current Refresh current#2 (Average power supply current) Refresh current#3 (Average power supply current) MB81V4100C-60
IO(L)
-10
--
10 61
ICC1 2 MB81V4100C-70 LVTTL level
--
-- 54 2.0
mA
mA
RAS = VIL, CAS cycling; tPC = min. RAS cycling; CAS-before-RAS; tRC = min. RAS = VIL; CAS = VIL Self refresh; tRASS = min.
6
MB81V4100C-60/MB81V4100C-70
s AC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.) Notes 3, 4, 5
No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 Parameter Time Between Refresh Random Read/Write Cycle Time Read-Modify-Write Cycle Time Access Time from RAS Access Time from CAS Column Address Access Time Output Hold Time Output Buffer Turn On Delay Time Output Buffer Turn Off Delay Time Transition Time RAS Precharge Time RAS Pulse Width RAS Hold Time CAS to RAS Precharge Time RAS to CAS Delay Time CAS Pulse Width CAS Hold Time CAS Precharge Time (Normal) Row Address Set Up Time Row Address Hold Time Column Address Set Up Time Column Address Hold Time RAS to Column Address Delay Time Column Address to RAS Lead Time Column Address to CAS Lead Time Read Command Set Up Time Read Command Hold Time Referenced to RAS Read Command Hold Time Referenced to CAS Write Command Set Up Time Write Command Hold Time WE Pulse Width Write Command to RAS Lead Time Write Command to CAS Lead Time 17 11, 12 10 6, 9 7, 9 8, 9 Notes Symbol tREF tRC tRWC tRAC tCAC tAA tOH tON tOFF tT tRP tRAS tRSH tCRP tRCD tCAS tCSH tCPN tASR tRAH tASC tCAH 13 tRAD tRAL tCAL tRCS 14 14 15 tRRH tRCH tWCS tWCH tWP tRWL tCWL MB81V4100C-60 Min. Max. -- 16.4 110 -- 130 -- -- -- -- 0 0 -- 2 40 60 15 0 20 15 60 10 0 10 0 12 15 30 30 0 0 0 0 10 10 15 15 60 15 30 -- -- 15 50 -- 100000 -- -- 45 10000 -- -- -- -- -- -- 30 -- -- -- -- -- -- -- -- -- -- MB81V4100C-70 Min. Max. -- 16.4 125 -- 148 -- -- -- -- 0 0 -- 2 45 70 20 0 20 20 70 10 0 10 0 12 15 35 35 0 0 0 0 10 10 18 18 70 20 35 -- -- 15 50 -- 100000 -- -- 50 10000 -- -- -- -- -- -- 35 -- -- -- -- -- -- -- -- -- -- Unit ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
7
MB81V4100C-60/MB81V4100C-70
s AC CHARACTERISTICS (Continued)
(At recommended operating conditions unless otherwise noted.) Notes 3, 4, 5
No. 34 35 36 37 38 39 40 41 42 43 51 52 53 54 55 56 57 Parameter DIN Set Up Time DIN Hold Time RAS to WE Delay Time CAS to WE Delay Time Column Address to WE Delay Time 15 15 15 Notes Symbol tDS tDH tRWD tCWD tAWD tRPC tCSR tCHR tWSR tWHR tPC tPRWC tCPA tCP tRASP tRHCP tCPWD MB81V4100C-60 Min. Max. 0 -- 10 -- 60 15 30 5 0 10 0 10 40 60 -- 10 -- 35 35 -- -- -- -- -- -- -- -- -- -- 35 -- 200000 -- -- MB81V4100C-70 Min. Max. 0 -- 10 -- 70 20 35 5 0 10 0 10 45 68 -- 10 -- 40 40 -- -- -- -- -- -- -- -- -- -- 40 -- 200000 -- -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
RAS Precharge Time to CAS Active Time (Refresh cycles) CAS Set Up Time for CAS-before-RAS Refresh CAS Hold Time for CAS-before-RAS Refresh WE Set Up Time from RAS WE Hold Time from RAS 18 18
Fast Page Mode Read/Write Cycle Time Fast Page Mode Read-Modify-Write Cycle Time Access Time from CAS Precharge 9, 16
Fast Page Mode CAS Precharge Time Fast Page Mode RAS Pulse width Fast Page Mode RAS Hold Time from CAS Precharge Fast Page Mode CAS Precharge to WE Delay Time
8
MB81V4100C-60/MB81V4100C-70
Notes: 1. Referenced to VSS 2. ICC depends on the output load conditions and cycle rates; The specified values are obtained with the output open. ICC depends on the number of address change as RAS = VIL and CAS = VIH. ICC1, ICC3 and ICC5 are specified at one time of address change during RAS = VIL and CAS = VIH. ICC4 is specified at one time of address change during one Page Cycle. 3. An Initial pause (RAS = CAS = VIH) of 200 s is required after power-up followed by any eight RASonly cycles before proper device operation is achieved. In case of using internal refresh counter, a minimum of eight CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 4. AC characteristics assume tT = 5 ns. 5. Input voltage levels are 0 V and 3.0 V, and input reference levels are VIH (min.) and VIL (max.) for measuring timing of input signals. Also, the transmission time (tT) is measured between VIH (min.) and VIL (max.). The output reference levels are VOH = 2.0 V and VOL = 0.8 V. 6. Assumes that tRCD tRCD (max.), tRAD tRAD (max.). If tRCD is greater than the maximum recommended value shown in this table, tRAC will be increased by the amount that tRCD exceeds the value shown. Refer to Fig. 2 and 3. 7. If tRCD tRCD (max.), tRAD tRAD (max.), and tASC tAA - tCAC - tT, access time is tCAC. 8. If tRAD tRAD (max.) and tASC tAA - tCAC - tT, access time is tAA. 9. Measured with a load equivalent to one TTL loads and 100 pF. 10. tOFF is specified that output buffer change to high impedance state. 11. Operation within the tRCD (max.) limit ensures that tRAC (max.) can be met. tRCD (max.) is specified as a reference point only; if tRCD is greater than the specified tRCD (max.) limit, access time is controlled exclusively by tCAC or tAA. 12. tRCD (min.) = tRAH (min.)+ 2tT + tASC (min.). 13. Operation within the tRAD (max.) limit ensures that tRAC (max.) can be met. tRAD (max.) is specified as a reference point only; if tRAD is greater than the specified tRAD (max.) limit, access time is controlled exclusively by tCAC or tAA. 14. Either tRRH or tRCH must be satisfied for a read cycle. 15. tWCS, tCWD, tRWD and tAWD are not a restrictive operating parameter. They are included in the data sheet as an electrical characteristic only. If tWCS t WCS (min.), the cycle is an early write cycle and DOUT pin will maintain high impedance state throughout the entire cycle. If tCWD tCWD (min.), tRWD tRWD (min.), and tAWD tAWD (min.), the cycle is a read-modify-write cycle and data from the selected cell will appear at the DOUT pin. If neither of the above conditions is satisfied, the cycle is a delayed write cycle and invalid data will appear the DOUT pin, and write operation can be executed by satisfying tRWL, tCWL, tCAL and tRAL specifications. 16. tCPA is access time from the selection of a new column address (that is caused by changing CAS from "L" to "H"). Therefore, if tCP is long, tCPA is longer than tCPA (max.). 17. Assumes that CAS-before-RAS refresh. 18. Assumes that Test mode function.
9
MB81V4100C-60/MB81V4100C-70
.
Fig. 2 - tRAC vs. tRCD
tRAC (ns) tRAC (ns)
Fig. 3 - tRAC vs. tRAD
tCPA (ns)
80
Fig. 4 - tCPA vs. tCP
140 70 120 100 80 60 40 90 60 80 70 60 50 70 ns Version 60 ns Version 50 40 30 70 ns Version 60 ns Version
70 ns version 60 ns version
20
40
60
80
100 120
10
20
30
40
50
60
10
20
30
40
50
60
tRCD (ns)
tRAD (ns)
tCP (ns)
s FUNCTIONAL TRUTH TABLE
Operation Mode Standby Read Cycle Write Cycle (Early Write) Read-Modify-Write Cycle RAS-only Refresh Cycle CAS-before-RAS Refresh Cycle Hidden Refresh Cycle Test mode Set Cycle (CBR) Test mode Set Cycle (Hidden) Clock Input RAS CAS H L L L L L HL L HL H L L L H L L L L WE X H L HL X H H L L Address Input Row -- Valid Valid Valid Valid -- -- -- -- Column -- Valid Valid Valid -- -- -- -- -- -- -- Valid X Valid -- -- -- -- -- Data Input Output High-Z Valid High-Z Valid High-Z High-Z Valid High-Z Valid Refresh -- Yes*1 Yes*1 Yes*1 Yes Yes Yes Yes Yes tCSR tCSR (min.) Previous data is kept tCSR tCSR (min.) tWSR tWSR (min.) tCSR tCSR (min.) tWSR tWSR (min.) tRCS tRCS (min.) tWCS tWCS (min.) tCWD tCWD (min.) Note
Notes: X : "H" or "L" *1 : It is impossible in Fast Page Mode.
10
MB81V4100C-60/MB81V4100C-70
Fig. 5 - READ CYCLE
tRC tRAS VIH RAS VIL tCRP tRCD CAS VIH VIL tASR VIH A0 to A10 VIL ROW ADD tRCS VIH VIL tRAC VOH DOUT VOL HIGH-Z tON VALID DATA tAA tCAC tOH tOFF HIGH-Z COLUMN ADD tRRH tRCH tRAH tRAD tRAL tASC tCAL tCAH tCSH tRSH tCAS tRP
WE
"H" or "L"
Invalid Data
DESCRIPTION The read cycle is executed by keeping both RAS and CAS "L" and keeping WE "H" throughout the cycle. The row and column addresses are latched with RAS and CAS, respectively. The data output remains valid with CAS "L", ie., if CAS goes "H" , the data becomes invalid after tOH is satisfied. The access time is determined by RAS (tRAC), CAS (tCAC), or Column address input (tAA). If tRCD (RAS to CAS delay time) is greater than the specification, the access time is tAA.
11
MB81V4100C-60/MB81V4100C-70
Fig. 6 - WRITE CYCLE (Early Write)
tRC tRAS VIH RAS VIL tCSH tCRP tRCD CAS VIH VIL tASR tRAD tRAH tASC COLUMN ADD tRAL tCAH tCAL tRSH tCAS tRP
A0 to A10
VIH VIL
ROW ADD
tWCS WE VIH VIL
tWCH
tDS
tDH
VIH DIN VIL
VALID DATA IN
DOUT
VOH VOL
HIGH-Z
"H" or "L"
DESCRIPTION The write cycle is executed by the same manner as read cycle except for the state of WE and DIN pins. The data on DIN pin is latched with the later falling edge of CAS or WE and written into memory. In addition, during write cycle, tRWL and tRAL must be satisfied with the specifications.
12
MB81V4100C-60/MB81V4100C-70
Fig. 7 - READ WRITE/READ-MODIFY-WRITE CYCLE
tRWC VIH RAS VIL tCSH tCRP tRCD tRSH tRAS tRP
CAS
VIH VIL tASR tRAD tASC tRAH tAWD tCAH VIH ROW ADD. COLUMN ADDRESS tRCS tCWD
tCAS
tRAL tCWL tRWL
A0 to A10
VIL
tWP WE VIH VIL tRWD tDS tDH VIH DIN VIL tCAC tAA tOH tRAC VOH DOUT VOL HIGH-Z tON VALID DATA VALID DATA tOFF
" H " or " L "
Invalid Data
DESCRIPTION The read-modify-write cycle is executed by changing WE from "H" to "L" after the data appears on the DOUT pin. After the current data is read out, modified data can be rewritten into the same address quickly.
13
MB81V4100C-60/MB81V4100C-70
Fig. 8 - FAST PAGE MODE READ CYCLE
tRASP RAS VIH VIL tPC tCRP VIH VIL tASR tRAH tRAD tCAH tASC tASC A0 to A9 VIH VIL ROW ADD COL ADD COL ADD tRCS tRCS tRCH tRRH COL ADD tRCH tCAH tASC tRAL tCAH tCSH tRCD tCAS tCP tCAS tCAS tRSH tRHCP tRP
CAS
WE
VIH VIL tON tAA tOH tOFF tON tCPA tCAC tOH tOFF
tCAC tAA tRAC DOUT VOH VOL
HIGH-Z
VALID
VALID
VALID
" H " or " L "
DESCRIPTION The fast page mode read cycle is executed after normal cycle with holding RAS "L", applying column address and CAS, and keeping WE "H" . Once an address is selected normally using the RAS and CAS, other addresses in the same row can be selected by only changing the column address and applying the CAS. During fast page mode, the access time is tCAC, tAA, or tCPA, whichever occurs later. Any of the 2048 bits belonging to each row can be accessed.
14
MB81V4100C-60/MB81V4100C-70
Fig. 9 - FAST PAGE MODE WRITE CYCLE (Early Write)
tRASP RAS VIH VIL tCSH tCRP tRCD CAS VIH VIL tRAH tASR VIH VIL tASC
ROW ADD COL ADD
tRHCP
tRSH tPC tCAS tCP tCAS tCAS
tRP
tRAD tCAH tASC tCAH tCAL
COL ADD
tCAH tRAL tASC
COL ADD
A0 to A10
tWCH tWCS tCWL WE VIH VIL tWP tDS VIH VIL tDH tDS tWP tWCS tCWL
tWCH tWCS tWCH tCWL
tWP tRWL tDH tDS tDH
VALID DATA
DIN
VALID DATA
VALID DATA
DOUT
VOH VOL HIGH-Z
"H" or " L"
DESCRIPTION The fast page mode write cycle is executed by the same manner as fast page mode read cycle except for the state of WE. The data on DIN pin is latched with the falling edge of CAS and written into the memory. During fast page mode write cycle, tCWL must be satisfied. Any of the 2048 bits belonging to each row can be accessed.
15
MB81V4100C-60/MB81V4100C-70
Fig. 11 - RAS-ONLY REFRESH (WE, DIN, A10 = "H" or "L")
tRC tRAS RAS VIH VIL tASR A0 to A9 VIH VIL tCRP CAS VIH VIL tOH DOUT VOH VOL HIGH-Z "H" or "L" DESCRIPTION The refresh of DRAM is executed by normal read, write or read-modify-write cycle, i.e., the cells on the one row line are also refreshed by executing one of three cycles. 1024 row address must be refreshed every 16.4ms period. During the refresh cycle, the cell data connected to the selected row are sent to sense amplifier and re-written to the cell. The MB81V4100C has three types of refresh modes, RAS-only refresh, CAS-before-RAS refresh, and Hidden refresh. The RAS-only refresh is executed by keeping RAS "L" and CAS "H" throughout the cycle. The row address to be refreshed is latched on the falling edge of RAS. During RAS-only refresh, the DOUT pin is kept in a high impedance state. tRAH ROW ADDRESS tRPC tRP
tOFF
Fig. 12 - CAS-BEFORE-RAS REFRESH (A0 to A10, DIN = "H" or "L")
tRC RAS VIH VIL tCPN CAS VIH VIL tWSR WE VIH VIL tOFF tOH DOUT VOH VOL HIGH-Z tWHR tCSR tCHR tRAS tRP
tRPC
"H" or "L" DESCRIPTION The CAS-before-RAS refresh is executed by bringing CAS "L" before RAS. By this timing combination, the MB81V4100C executes CAS-before-RAS refresh. The row address input is not necessary because it is generated internally. WE must be held "H" for the specified set up time (tWSR) before RAS goes "L" in order not to enter "test mode".
16
MB81V4100C-60/MB81V4100C-70
Fig. 13 - HIDDEN REFRESH CYCLE
tRC tRAS RAS VIH VIL tRCD tCRP CAS VIH VIL tASR A0 to A10 VIH VIL tRAH tASC tRAL tCAH COLUMN ADD. tRRH tWSR tWHR tRAD tRSH tCHR tRP tRAS
tRC
tRP
ROW ADDRESS tRCS
[Normal mode]
WE (Read) VIH VIL
tCAC tAA tON HIGH-Z tRWD tCWD tAWD tWP tWSR tRAC VALID DATA tWHR tOH tOFF
DOUT
VOH VOL
WE
tRCS VIH
(Read/Write VIL Cycle)
tDS DIN VIH VIL
tDH VALID
[Test mode]
WE (Read) VIH VIL
tRCS tCAC tAA tRAC tON HIGH-Z tRWD tRCS tAWD tCWD tWP
tWSR
tWHR
tOH VALID DATA tWSR tWHR
tOFF
DOUT
VOH VOL
WE
(Read/Write VIL Cycle)
VIH
tDS VALID
tDH
DIN
VIH VIL
" H " or " L " DESCRIPTION The hidden refresh is executed by keeping CAS "L" to next cycle, i.e., the output data at previous cycle is kept during next refresh cycle. Since the CAS is kept low continuously from previous cycle, followed refresh cycle should be CAS-before-RAS refresh. WE must be held "H" for the specified set up time (tWSR) before RAS goes "L" for the secound time in order not to enter "test mode" to be specified later.
17
MB81V4100C-60/MB81V4100C-70
Fig. 14 - TEST MODE SET CYCLE (A0 to A10, DIN = "H" or "L")
tRC VIH RAS VIL tRAS tRP
tCPN VIH CAS VIL
tCSR
tRPC tCHR
tWSR VIH WE VIL tOFF tOH VOH DQ (Output) VOL
tWHR
HIGH-Z
"H" or "L"
DESCRIPTION Test Mode; The purpose of this test mode is to reduce device test time to one eighth of that required to test the device conventionally. The test mode function is entered by performing a WE and CAS-before-RAS (WCBR) refresh for the entry cycle. In the test mode, read and write operations are executed in units of eights bits which are selected by the address combination of RA10, CA0 and CA10. In the write mode, data at DIN is written into eight cells simultaneously. In the read mode, eight cells at the selected addresses are read back and checked in the following manner. When the eight bits are all "L" or all "H", a "H" level is output.. When the eight bits show a combination of "L" and "H", a "L" level is output.. The test mode function is exited by performing a RAS-only refresh or a CAS-before-RAS refresh for the exit cycle. In test mode operation, the following parameters are delayed approximately 5ns from the specified value in the data sheet.. tRC, tRWC, tRAC, tAA, tRAS, tCSH, tRAL, tRWD, tAWD, tPC, tPRWC, tCPA, tRHCP, tCPWD
18
MB81V4100C-60/MB81V4100C-70
Fig. 15 - CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE
RAS
VIH VIL tCHR VIH VIL VIH VIL tWSR VIH VIL tON VOH VOL tRCS VIH VIL tDS VIH VIL tCSR tCP
tFRSH tFCAS tRAL
tRP
CAS
tASC A0 to A10 tWHR tRCS
tFCAH
COLUMN ADDRESS tRRH tFCAC tOH VALID DATA tFCWD tCWL tRWL tWP tDH VALID DATA "H" or "L" tRCH tOFF
WE (Read)
DOUT
HIGH-Z
WE (Write)
DIN
DESCRIPTION A special timing sequence using the CAS-before-RAS refresh counter test cycle provides a convenient method to verify the functionality of CAS-before-RAS refresh circuitry. If, after a CAS-before-RAS refresh cycle. CAS makes a transition from High to Low while RAS is held Low, read and write operations are enabled as shown above. Row and column addresses are defined as follows: Row Address: Bits A0 through A10 are defined by the on-chip refresh counter. Column Address: Bits A0 through A10 are defined by latching levels on A0-A10 at the second falling edge of CAS. The CAS-before-RAS Counter Test procedure is as follows ; 1) Initialize the internal refresh address counter by using 8 RAS-only refresh cycles. 2) Use the same column address throughout the test. 3) Write "0" to all 1024 row addresses at the same column address by using normal write cycles. 4) Read "0" written in procedure 3) and check; simultaneously write "1" to the same addresses by using CAS-before-RAS refresh counter test (read-modify-write cycles). Repeat this procedure 1024 times with addresses generated by the internal refresh address counter. 5) Read and check data written in procedure 4) by using normal read cycle for all 1024 memory locations. 6) Reverse test data and repeat procedures 3), 4), and 5). (At recommended operating conditions unless otherwise noted.) No. 90 91 92 93 94 Parameter Access Time from CAS Column Address Hold Time CAS to WE Delay Time CAS Pulse Width RAS Hold Time Symbol tFCAC tFCAH tFCWD tFCAS tFRSH MB81V4100C-60 Min. Max. -- 30 35 35 35 35 -- -- -- -- MB81V4100C-70 Min. Max. -- 30 40 40 40 40 -- -- -- -- Unit ns ns ns ns ns
Note. Assumes that CAS-before-RAS refresh counter test cycle only.
19
MB81V4100C-60/MB81V4100C-70
Fig. 16 - SELF REFRESH CYCLE (A0-A10 = OE = "H" or "L")
tRPS
RAS
VIH VIL tCPN tCSR
tRASS
tRPC tCHS
CAS
VIH VIL tWSR tWHR
WE
VIH VIL tOFF tOH
DOUT
VOH VOL
HIGH-Z "H" or "L" (At recommended operating conditions unless otherwise noted.)
No. 100 101 102
Parameter RAS Pulse Width RAS Precharge Time CAS Hold Time
Symbol tRASS tRPS tCHS
MB81V4100C-60 Min. 100 110 -50 Max. -- -- --
MB81V4100C-70 Min. 100 125 -50 Max. -- -- --
Unit s ns ns
Note. Assumes self refresh cycle only
DESCRIPTION The self refresh cycle provides a refresh operation without external clock and external Address. Self refresh control circuit on chip is operated in the self refresh cycle and refresh operation can be automatically executed using internal refresh address counter. If CAS goes to "L" before RAS goes to "L" (CBR) and the condition of CAS "L" and RAS "L" is kept for term of tRASS (more than 100 s), the device can be entered the self refresh cycle. And after that, refresh operation is automatically executed per fixed interval using internal refresh address counter during "RAS=L" and "CAS=L". And exit from self refresh cycle is performed by toggling of RAS and CAS to "H" with specifying tCHS min. Restruction for Self refresh operation ; For self refresh operation, the notice below must be considered. 1) In the case that distribute CBR refresh are operated in read/write cycles Self refresh cycles can be executed without special rule if 1024 cycles of distribute CBR refresh are executed within tREF max.. 2) In the case that burst CBR refresh or RAS-only refresh are operated in read/write cycles 1024 times of burst CBR refresh or 1024 times of burst RAS-only refresh must be executed before and after Self refresh cycles.
Read/Write operation RAS VIH VIL tNS < 1 ms 1024 times of burst refresh
Self Refresh operation tRASS
Read/Write operation
tSN<1 ms 1024 times of burst refresh
20
MB81V4100C-60/MB81V4100C-70
s PACKAGE DIMENSIONS
(Suffix: -PFTN) 26-LEAD PLASTIC FLAT PACKAGE (CASE No.: FPT-26P-M01)
Details of "A" part 26 22 18 14 .006(0.15)
.010(0.25) INDEX "A" .006(0.15)MAX. .020(0.50)MAX.
LEAD No. 1
5
9
13 .363.008 (9.220.20) .300.004 (7.620.10)
*.675.004 (17.140.10) .016.004 (0.400.10) .008(0.21) M
.043
+.004 +0.10 (1.10 )
.006.002 (0.150.05)
.050(1.27) TYP.
.004(0.10) .600(15.24)REF 0(0) MIN (STAND OFF
.020.004 (0.500.10)
.324.008 (8.220.20)
* : This dimension includes resin protrusion.(Each side : .006(0.15) MAX.)
(c)1991 FUJITSU LIMITED F26001S-3C
Dimensions in inches (millimeters)
21
MB81V4100C-60/MB81V4100C-70
s PACKAGE DIMENSIONS (Continued)
(Suffix: -PFTR) 26-LEAD PLASTIC FLAT PACKAGE (CASE No.: FPT-26P-M02)
Details of "A" part 26 22 18 14 .006(0.15)
.010(0.25) INDEX "A" .006(0.15)MAX. .020(0.50)MAX.
LEAD No. 1
5
9
13
.600(15.24)REF .050(1.27) TYP. .004(0.10) 0(0) MIN. (STAND OFF HEIGHT) .020.004 (0.500.10) .324.008 (8.220.20)
+.004 +0.10 .043 (1.10 ) *.675.004 (17.140.10) * : This dimension includes resin protrusion.(Each side : .006(0.15) MAX.)
.016.004 (0.400.10)
.008(0.21) M
.300.004 (7.620.10) .363.008 (9.220.20)
.006.002 (0.150.05)
(c)1991 FUJITSU LIMITED F26002S-3C
Dimensions in inches (millimeters)
22
MB81V4100C-60/MB81V4100C-70
FUJITSU LIMITED
For further information please contact:
Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-88, Japan Tel: (044) 754-3753 Fax: (044) 754-3329 North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division 3545 North First Street San Jose, CA 95134-1804, U.S.A. Tel: (408) 922-9000 Fax: (408) 432-9044/9045 Europe FUJITSU MIKROELEKTRONIK GmbH Am Siebenstein 6-10 63303 Dreieich-Buchschlag Germany Tel: (06103) 690-0 Fax: (06103) 690-122 Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LIMITED #05-08, 151 Lorong Chuan New Tech Park Singapore 556741 Tel: (65) 281 0770 Fax: (65) 281 0220
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have inherently a certain rate of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan.
F9704 (c) FUJITSU LIMITED
Printed in Japan
24

▲Up To Search▲

Price & Availability of MB81V4100C-60

	To Download MB81V4100C-60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .